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MJ4502 High-Power PNP Silicon Transistor
This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.
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* * * *
High DC Current Gain - hFE = 25-100 @ IC = 7.5 A Excellent Safe Operating Area Complement to the NPN MJ802 Pb-Free Package is Available*
30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS - 200 WATTS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCER VCB VCEO VEB IC IB PD TJ, Tstg Value 100 100 90 4.0 30 7.5 200 1.14 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc W W/_C _C TO-204AA (TO-3) CASE 1-07 STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol qJC Max 0.875 Unit _C/W MJ4502G AYYWW MEX
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MJ4502 G A YY WW MEX
= Device Code = Pb-Free Package = Assembly Location = Year = Work Week = Country of Origin
ORDERING INFORMATION
Device MJ4502 MJ4502G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Package TO-204 TO-204 (Pb-Free) Shipping 100 Units / Tray 100 Units / Tray
(c) Semiconductor Components Industries, LLC, 2009
October, 2009 - Rev. 12
1
Publication Order Number: MJ4502/D
PD, POWER DISSIPATION (WATTS)
II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Base-Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
Collector-Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
Base-Emitter "On" Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)
DC Current Gain (IC = 7.5 Adc, VCE = 2.0 Vdc)
Emitter-Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)
Collector-Base Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TC = 150_C)
Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc)
Collector-Emitter Breakdown Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)
Characteristic
100
150
200
50
0
0
Figure 1. Power-Temperature Derating Curve
20
40
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60 80 100 120 140 160 TC, CASE TEMPERATURE (C)
MJ4502
2 VCEO(sus) V(BR)CER Symbol VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE fT 180 200 Min 100 2.0 25 90 - - - - - - Max 100 1.3 0.8 1.3 1.0 1.0 5.0 - - - mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc -
MJ4502
3.0 hFE, NORMALIZED CURRENT GAIN 2.0 TJ = 175C 25C - 55C VCE = 2.0 V "ON" VOLTAGE (VOLTS) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10 20 30 0 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 VCE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 TJ = 25C
1.0 0.7 0.5 0.3 0.2
DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF ICBO. 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
0.1 0.03 0.05
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. "On" Voltages
100 IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 ms dc 1.0 ms 100 ms
5.0 2.0 1.0 0.5 0.2 0.1 1.0 TJ = 200C SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATIONS @ TC = 25C PULSE DUTY CYCLE v 10% 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions.
Figure 4. Active Region Safe Operating Area
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MJ4502
PACKAGE DIMENSIONS
TO-204 (TO-3) CASE 1-07 ISSUE Z
A N C E D
2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77
-T- K
M
SEATING PLANE
0.13 (0.005) U
2
TQ
M
Y
M
V H
L G
-Y- B
1
-Q- 0.13 (0.005)
DIM A B C D E G H K L N Q U V
M
TY
M
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MJ4502/D

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